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| 2N4124 / MMBT4124 Discrete POWER & Signal Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. See 2N3904 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 30 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4124 625 5.0 83.3 200 Max *MMBT4124 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation 2N4124 / MMBT4124 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 A, IE = 0 I C = 10 A, IC = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, IC = 0 25 30 5.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage I C = 2.0 mA, VCE = 1.0 V I C = 50 mA, VCE = 1.0 V I C = 50 mA, IB = 5.0 mA I C = 50 mA, IB = 5.0 mA 120 60 360 0.3 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Ccb hfe NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector-Base Capcitance Small-Signal Current Gain Noise Figure I C = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VBE = 0.5 V, IC = 0, f = 1.0 kHz VCB = 5.0 V, IE = 0, f = 100 kHz VCE = 10 V, IC = 2.0 mA, f = 1.0 kHz I C = 100 A, VCE = 5.0 V, RS =1.0k, f=10 Hz to 15.7 kHz 300 4.0 8.0 4.0 120 480 5.0 dB MHz pF pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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